Product Name: Gallium Phosphide (GaP) Substrate / Wafer 2'' at Western Minmetals Model NO.: 2'' Brand: WMC Application: LED Package: Aluminium Composite Type: Intrinsic Semiconductor Material: Gallium Phosphide Manufacturing Technology: VGF Diameter: 50.8+/-0.2mm Growth Method: Vgf Thickness: 300+/-20um Crystal Orientation: <111>+/-0.5degree Orientation Flat / Length: 16+/-1, 22+/-1 or 32+/-1 mm Identification Flat / Length: 8+/-1, 11+/-1 or 18+/-2 mm Orientation / Identification Flat Option: Ej, Us or Notch Resistivity: 0.003-0.3 Ohm.Cm Hall Mobility: 100 Cm2/V.S Min EPD: 3e5/Cm2 Trademark: WMC Transport Package: Wafer Container, Carton Box Outsiude Specification: 2'' Origin: Chengdu China HS Code: 8541900000 Product Description Gallium PhosphideSingle Crystal Wafer(GaP)is usually used for LED application.Diameter: 50.8+/- 0.2mmDopant: None / SulphurGrowthMethod: LECThickness: 300+/-20 umCrystal Orientation: <111>+/-0.5degreeOrientation Flat / Length: as SEMIIdentification Flat / Length: as SEMIOrientation / Identification FlatOption: as SEMICarrier Concentration: (4-6)E6 or (2-80)E17 /cm3Resistivity: 0.003-0.3 Ohm.cmHall Mobility: 100 cm2/v.s minFront / Backside Finish: P/P P/EEdge: no edge beveledProduct Packing: Aluminium CompositeTransportation Packing: wafer container, carton box outsiudeApplication: used for LEDNo.ItemStandard Specification1Size2"2Diametermm50.8±0.23Growth MethodLEC4DopedNoneor S5Conductor TypeSC/N6Standard Thicknessμm300±207Wafer Orientation<111>±0.5˚8ResistivityΩ.cm0.003-0.300Mobilitycm2/v.s100 minCarrier Concentrationcm-3(4-6)x106,(2-80)x1017, S-dopedEPDcm-2≤3x105Front/Back SurfaceP/E, P/P, E/E, P/LEdge ProfileNo edge bevelParticle CountAs SEMI10Laser MarkBack side or upon request11PackagingSingle wafer container or cassetteWestern Minmetals (SC) Corporation isa major supplier of FZ or CZ 2-8inch single crystal (Monocrystal) silicon ingot and wafer, Neutron Transmutation Doping (NTD) silicon wafer, and semiconductor compoundssuch as VGF Gallium Arsenide (GaAs),Indium Phosphide (InP), Gallium Phosphide (GaP), Indium Antimonide (InSb) and Indium Arsenide (InAs) substrateetc for solar photovoltaic, integrated circuits, transistor and other electronic industry.It is our goal to be a consistent, reliable and an affordable source for our global clientsat any time.