Product Name: Gallium Arsenide (GaAs) Zn-Doped Wafer at Western Minmetals Model NO.: 2'' 3'' 4'' Brand: WMC Application: LED, Ld, Optoelectronic, Microelectronic Package: Aluminium Composite Type: Intrinsic Semiconductor Material: Gallium Arsenic Manufacturing Technology: VGF Diameter: 50.8+/-0.2mm, 76.2+/-0.3mm, 100+/-0.5mm Growth Method: VGF Thickness: 220-350+/-20um Crystal Orientation: <100>+/-0.5degree Orientation Flat / Length: 16+/-1, 22+/-1 or 32+/-1 mm Identification Flat / Length: 8+/-1, 11+/-1 or 18+/-2 mm Orientation / Identification Flat Option: Ej, Us or Notch Resistivity: (0.8-9.0)E(-3) or 1e(-2) - 1e(-3) Ohm.Cm Hall Mobility: 1, 500-3, 000 Cm2/V.S EPD: 5, 000 /Cm2 Trademark: WMC Transport Package: Wafer Container, Carton Box Outsiude Specification: 2''3''4'' Origin: Chengdu China HS Code: 8541900000 Product Description Gallium Arsenide (GaAs) Zinc Doped Semiconducting Waferor substrate, CAS No. 1303-00-0, HS Code 85419000, melting point 1238oC, density 5.31g/cm3, vertical gradient freeze (VGF) growth, is extensively used for LED or LD application in the optoelectronic and microelectronic industry, 2"3"4"and 6"is available.Diameter: 50.8+/- 0.2, 76.2+/-0.3,100+/-0.3 mmDopant: ZincConduct Type: SC/PGrowthMethod: VGFThickness: 220-350+/-20 umCrystal Orientation: <100>+/-0.5degreeOrientation Flat / Length: 16+/-1, 22+/-1, 32+/-1 mmIdentification Flat / Length: 8+/-1mm, 11+/-1, 18+/-2mmOrientation / Identification FlatOption: EJ, US or NotchCarrier Concentration: (0.3-1.0)E18or (0.4-4.0)E18/cm3Resistivity: (0.8-9.0)E(-3) or 1E(-2) - 1E(-3) Ohm.cmHall Mobility: 1,500-3,000 cm2/v.sEPD: 5,000 /cm2 maxParticle Count: <50 (size>0.3um, count/wafer)TTV/Bow/Warp: 10ummaxLaser Mark: Upon backside or as requiredFront / Backside Finish: P/P P/EProduct Packing: Aluminium CompositeTransportation Packing: wafer container, carton box outsiudeApplication: extensively used for LED or LD applications, as well as optoelectronic, microelectronic industryNo.ItemStandard Specification1 GaAs2"3"4"2Diameter mm50.8±0.276.2±0.2100±0.23Doped Zn-dopedZn-dopedZn-doped4 Conductor TypeSC/PSC/PSC/PWafer Orientation(100) ±0.50(100) ±0.50(100) ±0.50Misorientation20/60/150off (110)Thickness μm(220-350)±20(220-350)±20(220-350)±20Wafer Orientation OptionEJ, US, NotchEJ, US, NotchEJ, US, NotchOrientation(OF)Flat mm16±1EJ(0-1-1)22±1EJ(0-1-1)22±1EJ(0-1-1)Identification(IO)Flat mm8±1EJ(0-11)11±1EJ(0-11)18±1EJ(0-11)Carrier Concentrationcm-3(0.3-1)x1018(0.4-4)x1018(0.4-4)x1018Resistivity W.cm(0.8-9)´10-31´10-2-10-31´10-2-10-3Mobility cm2/v.s1500-30001500-3000 1500-3000 EPD cm-2≤5000≤5000≤5000Front/Back sideP/P, P/EP/P, P/EP/P, P/ETTV/Bow/Warp ummax101010Particle Count<50 (size>0.3um,count/wafer)5Laser markBack side or upon request6PackagingSingle wafer containeror cassetteWestern Minmetals (SC) Corporation isa major supplier of FZ or CZ 2-8inch single crystal (Monocrystal) silicon ingot and wafer, Neutron Transmutation Doping (NTD) silicon wafer, and semiconductor compoundssuch as VGF Gallium Arsenide (GaAs),Indium Phosphide (InP), Gallium Phosphide (GaP), Indium Antimonide (InSb) and Indium Arsenide (InAs) substrateetc for solar photovoltaic, integrated circuits, transistor and other electronic industry.It is our goal to be a consistent, reliable and an affordable source for our global clientsat any time.