Product Name: Epitaxial Single Crystal Silicon Wafer at Western Minmetals (SC) Corporation Model NO.: 2'' 3'' 4'' 6'' 8'' Brand: Wmc Application: IC, Diode, Episubstrate, LED, Transistor, Discrete Package: in Foam Box or Cassette, Carton Box Outside Type: N/P Type Semiconductor Material: Single Crystal Silicon Manufacturing Technology: CZ Mcz Crystal Orientation: <100> <110>+/-1degree Resistivity: 0.003-80 Ohm.Cm RRV: 8% 10% 12%Max Thickness: 180-1, 000um Primary Flat / Length: <110>+/-1degree, 16+/-1.0 or 32.5+/-1.5, or as Sem Secondary Flat / Length: <110>+/-1degree, or as Semi TTV: 10 Um Max, or as Required Bow: 40 Um Max, or as Required Warp: 40 Um Max, or as Required Front/Backside Finish: Lapped/Etched/Polished Trademark: WMC Transport Package: in Foam Box or Cassette, Carton Box Outside Specification: 2''3''4''6''8'' Origin: Chengdu China HS Code: 3818001900 Product Description CZ (MCZ) SingleCrystal Silicon Wafer2"3"4"5''6"8"is widely used for diode, integrated circuit, epitaxialwafersubstrate, solar cell, LED, transistor, discrete component etc.No.ItemStandard Specification1Size2''3''4''6''8''2Diametermm50.8±0.376.2±0.3100±0.5154±0.5200±0.53Growth MethodCZ MCZ4DopantBoron/ Phosphorus5Conductivity TypeP/N6Thicknessμm180 - 1,000±10 or as required7Orientation<100><110>±18Primary Flat Orientation<110>±1°9Primary Flat Lengthmm16±1 or 32.5±1.5or as SEMI10Secondary Flat Orientation<110>±1°11Secondary Flat Lengthmmas SEMI12TTVμm≤10≤40≤40≤40≤4013TIRμm≤8≤8≤8≤8≤814Bowμm≤10≤40≤40≤40≤4015Warpμm≤10≤40≤40≤40≤4016ResistivityΩ.cmCZ: 0.003 - 80, MCZ: 0.001 - 10017RRV%≤8, ≤10, ≤1218Front / Backside FinishLapped / Etched / Polished19Surface QualityNo chip, dimple fracture, haze, moundor orange peel20ContaminationNo dirt, oil stain, soap or glue remains21Edge ProfileRounded or as required22Laser MarkBack or frontside as required23Packing25pcs in foam box or cassette, carton box outside,or as requiredWestern Minmetals (SC) Corporation isa major supplier of FZ or CZ 2-8inch single crystal (Monocrystal) silicon ingot and wafer, Neutron Transmutation Doping (NTD) silicon wafer, and semiconductor compoundssuch as VGF Gallium Arsenide (GaAs),Indium Phosphide (InP), Gallium Phosphide (GaP), Indium Antimonide (InSb) and Indium Arsenide (InAs) substrateetc for solar photovoltaic, integrated circuits, transistor and other electronic industry.It is our goal to be a consistent, reliable and an affordable source for our global clientsat any time.